Raman evidence for pressure-induced formation of diamondene.
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2017
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Abstract
Despite the advanced stage of diamond thin-film technology, with applications ranging
from superconductivity to biosensing, the realization of a stable and atomically thick
two-dimensional diamond material, named here as diamondene, is still forthcoming. Adding
to the outstanding properties of its bulk and thin-film counterparts, diamondene is predicted
to be a ferromagnetic semiconductor with spin polarized bands. Here, we provide spectroscopic
evidence for the formation of diamondene by performing Raman spectroscopy of
double-layer graphene under high pressure. The results are explained in terms of a breakdown
in the Kohn anomaly associated with the finite size of the remaining graphene sites
surrounded by the diamondene matrix. Ab initio calculations and molecular dynamics
simulations are employed to clarify the mechanism of diamondene formation, which requires
two or more layers of graphene subjected to high pressures in the presence of specific
chemical groups such as hydroxyl groups or hydrogens.
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MARTINS, L. G. P. et al. Raman evidence for pressure-induced formation of diamondene. Nature Communications, v. 8, p. 96-105, 2017. Disponível em: <https://www.nature.com/articles/s41467-017-00149-8#additional-information>. Acesso em: 16 jan. 2018.